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NE5550779A Datasheet(PDF) 11 Page - Renesas Technology Corp |
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NE5550779A Datasheet(HTML) 11 Page - Renesas Technology Corp |
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11 / 17 page  NE5550779A R09DS0040EJ0300 Rev.3.00 Page 11 of 15 Mar 12, 2013 TYPICAL CHARACTERISTICS 3 (TA = 25 °C) RF: f = 900 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40 mA, Pin = –5 to 30 dBm Input Power Pin (dBm) POWER GAIN, DRAIN CURRENT vs. INPUT POWER 0 40 30 25 20 15 10 5 0 30 25 20 15 10 5 0 10 25 20 10 5 0 –10 –5 15 25 20 10 5 0 –10 –5 15 Input Power Pin (dBm) OUTPUT POWER, POWER ADDED EFFICIENCY vs. INPUT POWER 80 70 0 1.5 0.9 0.3 1.2 0 60 40 20 0 50 30 1.8 0.6 add - 6.0 V add - 4.5 V add - 7.5 V add - 9 V add - 3.6 V GP - 3.6 V GP - 4.5 V GP - 6 V GP - 7.5 V GP - 9 V η η η η η IDS - 3.6 V IDS - 6.0 V IDS - 4.5 V IDS - 9 V IDS - 7.5 V Pout - 3.6 V Pout - 4.5 V Pout - 6.0 V Pout - 7.5 V Pout - 9 V 35 30 35 30 35 Remark The graphs indicate nominal characteristics. |
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