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2SC5337 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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2SC5337 Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page R09DS0047EJ0300 Rev.3.00 Page 1 of 5 Sep 14, 2012 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. Preliminary Data Sheet 2SC5337 NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the 2SC4536 ORDERING INFORMATION Part Number Order Number Package Quantity Supplying Form 2SC5337 2SC5337-AZ 25 pcs (Non reel) • Magazine case 2SC5337-T1 2SC5337-T1-AZ 4-pin power minimold (Pb-Free) Note 1 kpcs/reel • 12 mm wide embossed taping • Collector face the perforation side of the tape Note Contains Lead in the part except the electrode terminals. Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 15 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 250 mA Total Power Dissipation Ptot Note 2.0 W Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note Mounted on 16 cm 2 × 0.7 mm (t) ceramic substrate (Copper plating) CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. R09DS0047EJ0300 Rev.3.00 Sep 14, 2012 <R> |
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