©2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3

2

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only.

Symbol

Parameter

Device

Value

Units

TOTAL DEVICE

Storage Temperature

All

-40 to +150

°C

Operating Temperature

All

-40 to +100

°C

Lead Solder Temperature

All

260 for 10 sec

°C

Total Device Power Dissipation

Derate Linearly From 25°C

All

250

mW

2.94

mW/°C

EMITTER

Continuous Forward Current

All

60

mA

Forward Current – Peak (1µs pulse, 300 pps)

All

±1.0

A

LED Power Dissipation

Derate Linearly From 25°C

All

120

mW

1.41

mW/°C

DETECTOR

Continuous Collector Current

All

50

mA

Detector Power Dissipation

Derate linearity from 25°C

All

150

mW

1.76

mW/°C