Electronic Components Datasheet Search |
|
BQ24751RHDR Datasheet(PDF) 5 Page - Texas Instruments |
|
BQ24751RHDR Datasheet(HTML) 5 Page - Texas Instruments |
5 / 38 page ABSOLUTE MAXIMUM RATINGS bq24751 www.ti.com............................................................................................................................................... SLUS734D – DECEMBER 2006 – REVISED MARCH 2009 Table 1. PIN FUNCTIONS – 28-PIN QFN (continued) PIN DESCRIPTION NAME NO. Charge current sense resistor, negative input. A 0.1- µF ceramic capacitor is placed from SRN to CSP to provide SRN 18 differential-mode filtering. An optional 0.1- µF ceramic capacitor is placed from SRN pin to AGND for common-mode filtering. Charge current sense resistor, positive input. A 0.1- µF ceramic capacitor is placed from SRN to SRP to provide SRP 19 differential-mode filtering. A 0.1- µF ceramic capacitor is placed from SRP pin to AGND for common-mode filtering. CELLS 20 2, 3 or 4 cells selection logic input. Logic low programs 3 cell. Logic high programs 4 cell. Floating programs 2 cell. Learn mode logic input control pin — logic high to override system selector when adapter is present, the battery is discharged to recalibrate the battery-pack gas gauge. When adapter is present and LEARN is high, battery charging is disabled, the adapter is disconnected (ACDRV is off), and the battery is connected to system (BATDRV is on). Sytem LEARN 21 selector automatically switches to adapter if battery is discharged below LOWBAT (3 V). When adapter is present and LEARN is low, the adapter is connected to system in normal selector logic (ACDRV is on and BATDRV is off), allowing battery charging. If adapter is not present, the battery is always connected to the system (ACDRV is off and BATDRV is on). Power ground. Ground connection for high-current power converter node. On PCB layout, connect directly to source of PGND 22 low-side power MOSFET, to ground connection of in put and output capacitors of the charger. Only connect to AGND through the PowerPad underneath the IC. LODRV 23 PWM low side driver output. Connect to the gate of the low-side power MOSFET with a short trace. PWM low side driver positive 6-V supply output. Connect a 1- µF ceramic capacitor from REGN to PGND, close to the REGN 24 IC. Use for high-side driver bootstrap voltage by connecting a small-signal Schottky diode from REGN to BTST. PWM high side driver negative supply. Connect to the phase switching node (junction of the low-side power MOSFET PH 25 drain, high-side power MOSFET source, and output inductor). Connect the 0.1- µF bootstrap capacitor from from PH to BTST. HIDRV 26 PWM high side driver output. Connect to the gate of the high-side power MOSFET with a short trace. PWM high side driver positive supply. Connect a 0.1- µF bootstrap ceramic capacitor from BTST to PH. Connect a BTST 27 small bootstrap Schottky diode from REGN to BTST. IC power positive supply. Connect to the common-source (diode-OR) point: source of high-side P-channel MOSFET PVCC 28 and source of reverse-blocking power P-channel MOSFET. Place a 1- µF ceramic capacitor from PVCC to PGND pin close to the IC. Exposed pad beneath the IC. AGND and PGND star-connected only at the PowerPad plane. Always solder PowerPad PowerPad to the board, and have vias on the PowerPad plane connecting to AGND and PGND planes. It also serves as a thermal pad to dissipate the heat. over operating free-air temperature range (unless otherwise noted) (1) (2) VALUE UNIT PVCC, ACP, ACN, SRP, SRN, BAT, BATDRV, ACDRV –0.3 to 30 PH –1 to 30 REGN, LODRV, VREF, VDAC, VADJ, ACSET, SRSET, ACDET, ACOP, –0.3 to 7 Voltage range CHGEN, CELLS, STAT, ACGOOD, LEARN, OVPSET V VREF, IADAPT –0.3 to 3.6 BTST, HIDRV with respect to AGND and PGND –0.3 to 36 Maximum difference voltage ACP–ACN, SRP–SRN, AGND–PGND –0.5 to 0.5 Junction temperature range –40 to 155 °C Storage temperature range –55 to 155 °C (1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltages are with respect to GND if not specified. Currents are positive into, negative out of the specified terminal. Consult Packaging Section of the data book for thermal limitations and considerations of packages. Copyright © 2006–2009, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Link(s) :bq24751 |
Similar Part No. - BQ24751RHDR |
|
Similar Description - BQ24751RHDR |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |