BQ24085DRCRG4 datasheet(3/35 Pages) TI

Part #	BQ24085DRCRG4

Description	750 mA SINGLE-CHIP Li-Ion/Li-Pol CHARGE MANAGEMENT IC

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Manufacturer	TI [Texas Instruments]

Direct Link	http://www.ti.com

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ELECTRICAL CHARACTERISTICS

bq24085, bq24086

bq24087, bq24088

www.ti.com............................................................................................................................................. SLUS784D – DECEMBER 2007 – REVISED AUGUST 2009

over recommended operating range, TJ = 0 –125°C range, See the Application Circuits section, typical values at TJ = 25°C

(unless otherwise noted), RTMR = 49.9KΩ

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

POWER DOWN THRESHOLD – UNDERVOLTAGE LOCKOUT

V(IN) = 0 V, increase V(OUT): 0 → 3 V OR

UVLO

Power down threshold

V(OUT) = 0 V, increase V(IN): 0 → 3 V,

1.5

3

V

CE = LO (1)

V(IN) = 0 V → 5 V in 1 µs to

tDGL(PG)

Deglitch time on power good

2

ms

PG:HI

→ LO

INPUT POWER DETECTION, CE = HI or LOW, V(IN) > 3.5 V

VIN(DT)

Input power detection threshold

V(IN) detected at [V(IN) – V(OUT)] > VIN(DT)

130

mV

Input power not detected at

VHYS(INDT)

Input power detection hysteresis

30

mV

[V(IN) – V(OUT)] < [VIN(DT) – VHYS(INDT)]

Delay time, input power not detected

tDGL(NOIN)

PG: LO

→HI after tDGL(NOIN)

10

µs

status(1)

Charger turned off after tDLY(CHGOFF), Measured

tDLY(CHGOFF)

Charger off delay

25

ms

from PG: LO

→ HI; Timer reset after tDLY(CHGOFF)

INPUT OVERVOLTAGE PROTECTION

bq24088

10.2

10.5

11.7

V(OVP)

Input overvoltage detection threshold

V(IN) increasing

V

bq24085/6/7

6.2

6.5

7

bq24088

0.5

VHYS(OVP)

Input overvoltage hysteresis

V(IN) decreasing

V

bq24085/6/7

0.2

CE = HI or LO, Measured from V(IN) > V(OVP) to

tDGL(OVDET)

Input overvoltage detection delay

100

µs

PG: LO

→ HI; VIN increasing

CE = HI or LO, Measured from V(IN) < V(OVP)

tDGL(OVNDET)

Input overvoltage not detected delay(1)

100

µs

to PG: HI

→ LO; V(IN) decreasing

QUIESCENT CURRENT

V(IN) = 6 V

100

200

Input power detected,

ICC(CHGOFF)

IN pin quiescent current, charger off

µA

CE = HI

V(IN) = 16.5 V

350

ICC(CHGON)

IN pin quiescent current, charger on

Input power detected, CE = LO, VBAT = 4.5 V

4

6

mA

Battery leakage current after termination

Input power detected, charge terminated,

IBAT(DONE)

1

5

µA

into IC

CE = LO

Battery leakage current into IC, charger

Input power detected, CE = HI OR

IBAT(CHGOFF)

1

5

µA

off

input power not detected, CE = LO

TS PIN COMPARATOR

V(TS1)

Lower voltage temperature threshold

Hot detected at V(TS) < V(TS1); NTC thermistor

29

30

31

%V(IN)

V(TS2)

Upper voltage temperature threshold

Cold detected at V(TS) > V(TS2); NTC thermistor

60

61

62

%V(IN)

Temp OK at V(TS) > [ V(TS1) + VHYS(TS) ] OR

VHYS(TS)

Hysteresis

2

%V(IN)

V(TS) < [ V(TS2) – VHYS(TS) ]

CE INPUT

VIL

Input (low) voltage

V(/CE)

0

1

V

VIH

Input (high) voltage

V(/CE)

2

V

STAT1, STAT2 AND PG OUTPUTS , V(IN) ≥ VO(REG) + V(DO-MAX)

VOL

Output (low) saturation voltage

Iout = 1 mA (sink)

200

mV

THERMAL SHUTDOWN

T(SHUT)

Temperature trip

Junction temperature, temp rising

155

°C

T(SHUTHYS)

Thermal hysteresis

Junction temperature

20

°C

(1)

Specified by design, not production tested.

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Product Folder Link(s): bq24085, bq24086 bq24087, bq24088

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