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BZX84C22ET1G Datasheet(PDF) 1 Page - ON Semiconductor |
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BZX84C22ET1G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev. 8 1 Publication Order Number: BZX84C2V4ET1/D BZX84CxxxET1G Series, SZBZX84CxxxET1G Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. Specification Features 225 mW Rating on FR−4 or FR−5 Board Zener Breakdown Voltage Range − 2.4 V to 75 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (> 16 kV) per Human Body Model Peak Power − 225 W (8 X 20 ms) AEC−Q101 Qualified and PPAP Capable SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Pb−Free Packages are Available* Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 MAXIMUM RATINGS Rating Symbol Max Unit Peak Power Dissipation @ 20 ms (Note 1) @ TL 25C Ppk 225 W Total Power Dissipation on FR−5 Board, (Note 2) @ TA = 25C Derated above 25C Thermal Resistance, Junction−to−Ambient PD RqJA 225 1.8 556 mW mW/C C/W Total Power Dissipation on Alumina Substrate, (Note 3) @ TA = 25C Derated above 25C Thermal Resistance, Junction−to−Ambient PD RqJA 300 2.4 417 mW mW/C C/W Junction and Storage Temperature Range TJ, Tstg −65 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Nonrepetitive current pulse per Figure 9. 2. FR−5 = 1.0 X 0.75 X 0.62 in. 3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Device Package Shipping† ORDERING INFORMATION SOT−23 CASE 318 STYLE 8 3 Cathode 1 Anode MARKING DIAGRAM http://onsemi.com †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. DEVICE MARKING INFORMATION BZX84CxxxET1G SOT−23 (Pb−Free) 3,000 / Tape & Reel 1 xxx M G G BZX84CxxxET3G SOT−23 (Pb−Free) 10,000 / Tape & Reel xxx = Device Code M = Date Code* G = Pb−Free Package *Date Code orientation may vary depending upon manufacturing location. (Note: Microdot may be in either location) SZBZX84CxxxET1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SZBZX84CxxxET3G SOT−23 (Pb−Free) 10,000 / Tape & Reel |
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