REV. A

–3–

SSM2018T/SSM2118T

ABSOLUTE MAXIMUM RATINGS

1

Supply Voltage

Dual Supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±18 V

Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±V

S

Operating Temperature Range . . . . . . . . . . . . . –40

°C to +85°C

Storage Temperature . . . . . . . . . . . . . . . . . . . –65

°C to +150°C

°C

Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . . +300

°C

THERMAL CHARACTERISTICS

Thermal Resistance

2

16-Pin Plastic DIP

θ

JA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76

°C/W

θ

JC

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

°C/W

16-Pin SOIC

θ

JA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92

°C/W

θ

JC

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

°C/W

TRANSISTOR COUNT

Number of Transistors

SSM2018T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125

SSM2118T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108

ESD RATINGS

883 (Human Body) Model . . . . . . . . . . . . . . . . . . . . . . . 500 V

EIAJ Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V

permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions above those indicated in the

operation section of this specification is not implied. Exposure to absolute maxi-

mum rating conditions for extended periods may affect device reliability.

2

θ

θ

for P-DIP and device soldered in circuit board for SOIC package.

ORDERING GUIDE

Model

Temperature Range

Package Option*

SSM2018TP

–40

°C to +85°C

N-16

SSM2018TS

–40

°C to +85°C

R-16

SSM2118TP

–40

°C to +85°C

N-16

SSM2118TS

–40

°C to +85°C

R-16

*N = Plastic DIP; R = SOL.

PIN CONFIGURATIONS

16-Lead Plastic DIP

and SOL

16-Lead Plastic DIP

and SOL

V+

BAL

COMP 1

+IN

–IN

MODE

V–

GND

COMP 2

COMP 3

1

2

16

15

5

6

7

12

11

10

3

4

14

13

89

TOP VIEW

(Not to Scale)

SSM2018T

V+

BAL

COMP 1

+IN

–IN

MODE

V–

GND

COMP 2

COMP 3

1

2

16

15

5

6

7

12

11

10

3

4

14

13

89

TOP VIEW

(Not to Scale)

SSM2118T

SSM2018T Typical Application Circuit

SSM2118T Typical Application Circuit

1

µF

18k

V

IN+

V–

150k

A1

10k

10k

18k

18k

500k

50pF

V

OUT

GLOBAL

SYMMETRY

TRIM

FROM

ADDITIONAL

SSM2118Ts

V–

1

µF 18k

V

IN–

47pF

1

µF

3k

V

CONTROL

V+

50pF

*

470k

OPTIONAL

TRIM

47k

47k

A1, A2: OP275

1

2

5

6

7

3

4

8

16

15

12

11

10

14

13

9

SSM2118T

A2

1k

WARNING!

ESD SENSITIVE DEVICE

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection.

Although the SSM2018T/SSM2118T features proprietary ESD protection circuitry, permanent

damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper

ESD precautions are recommended to avoid performance degradation or loss of functionality.

V+

1

µF

150k

18k

V+

18k

V

IN+

1

µF 18k

V

IN–

47pF

1

µF

50pF

1k

V

CONTROL

3k

V

OUT

V–

1

2

16

15

5

6

7

12

11

10

3

4

14

13

89

SSM2018T

OBSOLETE