1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Dual Diode

Common Anode

MAXIMUM RATINGS (EACH DIODE)

Rating

Symbol

Value

Unit

Reverse Voltage

VR

70

Vdc

Peak Forward Recurrent Current

IF

200

mAdc

Peak Forward Surge Current

(Pulse Width = 10

µsec)

IFM(surge)

500

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD(1)

625

5.0

mW

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg(1)

– 55 to +135

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Breakdown Voltage

(I(BR) = 100 µAdc)

V(BR)

70

—

—

Vdc

Reverse Current

(VR = 50 Vdc)

IR

—

—

0.1

µAdc

Forward Voltage

(IF = 10 mAdc)

VF

—

0.80

1.0

Vdc

Capacitance

(VR = 0)

C

—

5.0

8.0

pF

Reverse Recovery Time

(IF = IR = 10 mAdc, VR = 5.0 Vdc, irr = 1.0 mAdc)

trr

—

—

100

ns

1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: PD = 1.0 W @ TC = 25°C,

Derate above 8.0 mW/

°C, PD = 10 W @ TC = 25°C, Derate above 80 mW/°C, TJ, Tstg = –55 to +150°C, θJC = 12.5°C/W, θJA = 125°C.

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by MSD6150/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MSD6150

CASE 29–04, STYLE 4

TO–92 (TO–226AA)

1

2

3

3 Anode

Cathode 1

2 Cathode