NPN RF Transistor

This device is designed for common-emitter low noise

amplifier and mixer applications with collector currents

in the 100

µA to 20 mA range to 300 MHz, and low

frequency drift common-base VHF oscillator applications

with high output levels for driving FET mixers. Sourced

from Process 47. See MPSH11 for characteristics.

MPSH24

MMBTH24

C

B

E

TO-92

C

B

E

SOT-23

Mark: 3A

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

30

V

Collector-Base Voltage

40

V

Emitter-Base Voltage

4.0

V

Collector Current - Continuous

50

mA

Operating and Storage Junction Temperature Range

-55 to +150

°C

Symbol

Characteristic

Max

Units

MPSH24

*MMBTH24

Total Device Dissipation

Derate above 25

°C

625

5.0

225

1.8

mW

mW/

°C

Thermal Resistance, Junction to Case

83.3

°C/W

Thermal Resistance, Junction to Ambient

200

556

°C/W

Discrete POWER & Signal

Technologies

©1997 Fairchild Semiconductor Corporation