1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

NPN General Purpose Amplifier

Transistors Surface Mount

Rating

Symbol

Value

Unit

Collector–Base Voltage

V(BR)CBO

60

Vdc

Collector–Emitter Voltage

V(BR)CEO

50

Vdc

Emitter–Base Voltage

V(BR)EBO

7.0

Vdc

Collector Current — Continuous

IC

100

mAdc

Collector Current — Peak

IC(P)

200

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Power Dissipation

PD

200

mW

Junction Temperature

TJ

150

°C

Storage Temperature

Tstg

– 55 ~ +150

°C

Characteristic

Symbol

Min

Max

Unit

Collector–Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0)

V(BR)CEO

50

—

Vdc

Collector–Base Breakdown Voltage (IC = 10 µAdc, IE = 0)

V(BR)CBO

60

—

Vdc

Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0)

V(BR)EBO

7.0

—

Vdc

Collector–Base Cutoff Current (VCB = 45 Vdc, IE = 0)

ICBO

—

0.1

µAdc

Collector–Emitter Cutoff Current (VCE = 10 Vdc, IB = 0)

ICEO

—

100

nAdc

DC Current Gain(1)

(VCE = 10 Vdc, IC = 2.0 mAdc)

MSD601–RT1

MSD601–ST1

(VCE = 2.0 Vdc, IC = 100 mAdc)

hFE1

hFE2

210

290

90

340

460

—

—

Collector–Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc)

VCE(sat)

—

0.5

Vdc

1. Pulse Test: Pulse Width

≤ 300 µs, D.C. ≤ 2%.

DEVICE MARKING

Marking Symbol

MSD601–RT1

MSD601–ST1

The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month

in which the part was manufactured.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MSD601–RT1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

© Motorola, Inc. 1996

MSD601-RT1

MSD601-ST1

*Motorola Preferred Device

*

CASE 318D–03, STYLE 1

SC–59

2

1

3

COLLECTOR

3

2

BASE

1

EMITTER

REV 2