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MSD601-ST1 Datasheet(PDF) 1 Page - Motorola, Inc |
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MSD601-ST1 Datasheet(HTML) 1 Page - Motorola, Inc |
1 / 4 page 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data NPN General Purpose Amplifier Transistors Surface Mount MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 60 Vdc Collector–Emitter Voltage V(BR)CEO 50 Vdc Emitter–Base Voltage V(BR)EBO 7.0 Vdc Collector Current — Continuous IC 100 mAdc Collector Current — Peak IC(P) 200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 °C Storage Temperature Tstg – 55 ~ +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Min Max Unit Collector–Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO 50 — Vdc Collector–Base Breakdown Voltage (IC = 10 µAdc, IE = 0) V(BR)CBO 60 — Vdc Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) V(BR)EBO 7.0 — Vdc Collector–Base Cutoff Current (VCB = 45 Vdc, IE = 0) ICBO — 0.1 µAdc Collector–Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) ICEO — 100 nAdc DC Current Gain(1) (VCE = 10 Vdc, IC = 2.0 mAdc) MSD601–RT1 MSD601–ST1 (VCE = 2.0 Vdc, IC = 100 mAdc) hFE1 hFE2 210 290 90 340 460 — — Collector–Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) — 0.5 Vdc 1. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%. DEVICE MARKING Marking Symbol YRX MSD601–RT1 YSX MSD601–ST1 The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. Order this document by MSD601–RT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA © Motorola, Inc. 1996 MSD601-RT1 MSD601-ST1 *Motorola Preferred Device * CASE 318D–03, STYLE 1 SC–59 2 1 3 COLLECTOR 3 2 BASE 1 EMITTER REV 2 |
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