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MMBTA42 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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MMBTA42 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 14 page Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 300 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, I E = 0 300 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 µA, I C = 0 6.0 V ICBO Collector-Cutoff Current VCB = 200 V, IE = 0 0.1 µA IEBO Emitter-Cutoff Current VEB = 6.0 V, IC = 0 0.1 µA SMALL SIGNAL CHARACTERISTICS ON CHARACTERISTICS* hFE DC Current Gain IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V 25 40 40 VCE(sat) Collector-Emitter Saturation Voltage IC = 20 mA, IB = 2.0 mA 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC = 20 mA, IB = 2.0 mA 0.9 V *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model NPN (Is=34.9f Xti=3 Eg=1.11 Vaf=100 Bf=2.65K Ne=1.708 Ise=16.32p Ikf=23.79m Xtb=1.5 Br=9.769 Nc=2 Isc=0 Ikr=0 Rc=7 Cjc=14.23p Mjc=.5489 Vjc=.75 Fc=.5 Cje=49.62p Mje=.4136 Vje=.75 Tr=934.3p Tf=1.69n Itf=5 Vtf=20 Xtf=150 Rb=10) fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V, f = 100 MHz 50 MHz Ccb Collector-Base Capacitance VCB = 20 V, IE = 0, f = 1.0 MHz 3.0 pF NPN High Voltage Amplifier (continued) Typical Characteristics DC Current Gain vs Collector Current 0.1 1 10 100 20 40 60 80 100 120 140 I - COLLECTOR CURRENT (mA) - 40 ºC 25 °C C V = 5V CE 125 °C Collector-Emitter Saturation Voltage vs Collector Current P 0.1 1 10 100 0.05 0.1 0.15 0.2 0.25 0.3 I - COLLECTOR CURRENT (mA) C β = 10 - 40 ºC 25 °C 125 °C |
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