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HIT667-TZ-EQ Datasheet(PDF) 2 Page - Renesas Technology Corp |
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2 / 5 page HIT667 Preliminary R07DS0450EJ0400 Rev.4.00 Page 2 of 4 Jun 14, 2011 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 120 — — V IC = 100 A, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 100 — — V IC = 10 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 6 — — V IE = 100 A, IC = 0 Collector cutoff current ICBO — — 500 nA VCB = 120 V, IE = 0 Emitter cutoff current IEBO — — 500 nA VEB = 6 V, IC = 0 DC current transfer ratio hFE1 140 — 330 — VCE = 2 V, IC = 150 mA hFE2 40 — — — VCE = 5 V, IC = 1 A Collector to emitter saturation voltage VCE(sat) — — 0.5 V IC = 500 mA, IB = 50 mA Base to emitter saturation voltage VBE(sat) — — 1.1 V IC = 500 mA, IB = 50 mA |
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