8

S1C63567

• OSC1 CR oscillation frequency-resistance

characteristic

Ω]

Ta = 25

°C

Typ. value

20k

30k

40k

50k

60k

70k

80k

90k

100k

110k

120k

500k

600k

700k

800k

900k

1M

1.1M

1.2M

1.4M

1.3M

1.5M

• OSC3 CR oscillation frequency-resistance

characteristic

Ω]

Ta = 25

°C

Typ. value

2.5M

2.3M

2.1M

1.9M

1.7M

1.5M

1.3M

1.1M

900k

30k

40k

50k

60k

70k

80k

90k

100k

120k

110k

● Oscillation Characteristics

The oscillation characteristics change depending on the conditions (components used, board pattern, etc.). Use the follow-

ing characteristics as reference values.

OSC1 Crystal Oscillation Circuit

Characteristic

Oscillation start voltage

Oscillation stop voltage

Built-in capacitance (drain)

Frequency/voltage deviation

Frequency/IC deviation

Frequency adjustment range

Harmonic oscillation start voltage

Permitted leak resistance

Symbol

Vsta

Vstp

∆f/∆V

∆f/∆IC

Unit

V

V

pF

ppm

ppm

ppm

V

M

Ω

Max.

10

10

Typ.

14

20

Min.

2.2

2.2

-10

10

5.5

200

Condition

Including the parasitic capacitance inside the IC (in chip)

°C)

OSC1 CR Oscillation Circuit

Characteristic

Oscillation frequency dispersion

Oscillation start voltage

Oscillation start time

Oscillation stop voltage

Symbol

Vsta

Vstp

Unit

%

V

mS

V

Max.

30

3

Typ.

60kHz

Min.

-30

2.2

2.2

Condition

Ω, Ta=-20 to 70°C)

OSC3 Ceramic Oscillation Circuit

Characteristic

Oscillation start voltage

Oscillation start time

Oscillation stop voltage

Symbol

Vsta

Vstp

Unit

V

mS

V

Max.

5

Typ.

Min.

2.2

2.2

Condition

°C)

OSC3 CR Oscillation Circuit

Characteristic

Oscillation frequency dispersion

Oscillation start voltage

Oscillation start time

Oscillation stop voltage

Symbol

Vsta

Vstp

Unit

%

V

mS

V

Max.

25

3

Typ.

1,800kHz

Min.

-25

2.2

2.2

Condition

Ω, Ta=-20 to 70°C)