NXP Semiconductors

PBSS5130PAP

30 V, 1 A PNP/PNP low VCEsat (BISS) transistor

PBSS5130PAP

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Product data sheet

12 December 2012

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5. Pinning information

Table 2.

Pinning information

Pin

Symbol Description

Simplified outline

Graphic symbol

1

E1

emitter TR1

2

B1

base TR1

3

C2

collector TR2

4

E2

emitter TR2

5

B2

base TR2

6

C1

collector TR1

7

C1

collector TR1

8

C2

collector TR2

Transparent top view

6

7

8

5

4

1

2

3

DFN2020-6 (SOT1118)

sym138

B1

E1

C2

B2

C1

TR1

TR2

E2

6. Ordering information

Table 3.

Ordering information

Package

Type number

Name

Description

Version

PBSS5130PAP

DFN2020-6

plastic thermal enhanced ultra thin small outline package; no

leads; 6 terminals; body 2 x 2 x 0.65 mm

SOT1118

7. Marking

Table 4.

Marking codes

Type number

Marking code

PBSS5130PAP

2E

8. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

collector-base voltage

open emitter

-

-30

V

collector-emitter voltage

open base

-

-30

V

emitter-base voltage

open collector

-

-7

V

collector current

-

-1

A

peak collector current

-

-2

A

base current

-

-0.3

A