NXP Semiconductors

PBSS4160PAN

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

PBSS4160PAN

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Product data sheet

14 January 2013

5 / 17

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per device

[1]

-

-

245

K/W

[2]

-

-

160

K/W

[3]

-

-

171

K/W

[4]

-

-

130

K/W

[5]

-

-

202

K/W

[6]

-

-

120

K/W

[7]

-

-

130

K/W

thermal resistance

from junction to

ambient

in free air

[8]

-

-

63

K/W

[1] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated, mounting pad for

[3] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated and standard footprint.

[5] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated and standard footprint.

[6] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated, mounting pad for

[7] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated and standard footprint.

006aad166

10

1

10

(K/W)

1

duty cycle = 1

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

0

FR4 PCB 35 µm, standard footprint

Fig. 2. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;

typical values