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PBSS4160PAN Datasheet(PDF) 5 Page - NXP Semiconductors |
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PBSS4160PAN Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 17 page NXP Semiconductors PBSS4160PAN 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor PBSS4160PAN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved Product data sheet 14 January 2013 5 / 17 Symbol Parameter Conditions Min Typ Max Unit Per device [1] - - 245 K/W [2] - - 160 K/W [3] - - 171 K/W [4] - - 130 K/W [5] - - 202 K/W [6] - - 120 K/W [7] - - 130 K/W Rth(j-a) thermal resistance from junction to ambient in free air [8] - - 63 K/W [1] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated and standard footprint. [4] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated, mounting pad for collector 1 cm2. [5] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated and standard footprint. [6] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated, mounting pad for collector 1 cm2. [7] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated and standard footprint. [8] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated, mounting pad for collector 1 cm2. 006aad166 10-5 10 10-2 10-4 102 10-1 tp (s) 10-3 103 1 102 10 103 Zth(j-a) (K/W) 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 FR4 PCB 35 µm, standard footprint Fig. 2. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration; typical values |
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