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E-GSM900 Datasheet(PDF) 11 Page - Silicon Laboratories

Part No. E-GSM900
Description  Single 8x8 mm package CMOS process technology Intergrated GSM/GPRS transceiver including
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Maker  SILABS [Silicon Laboratories]
Homepage  http://www.silabs.com
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 11 page
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Aero I
Rev. 1.0
11
Table 6. Transmitter Characteristics
(VDD = 2.7 to 3.0 V, TA = –20 to 85 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
RFOG Output Frequency1
GSM 850 band
824
849
MHz
E-GSM 900 band
880
915
MHz
RFOD Output Frequency2
DCS 1800 band
1710
1785
MHz
PCS 1900 band
1850
1910
MHz
I/Q Differential Input Swing3,4
0.88
2.2
VPPD
I/Q Input Common-Mode3
1.1
1.4
V
I/Q Differential Input Resistance3,4
BBG[1:0] = 11b
26
30
35
k
BBG[1:0] = 00b
22
25
29
k
BBG[1:0] = 01b
17
20
23
k
Powered down
Hi-Z
k
I/Q Input Capacitance3,5
——
5
pF
I/Q Input Bias Current3
13
16
19
µA
Sideband Suppression
67.7 kHz sinusoid
–46
–34
dBc
Carrier Suppression
67.7 kHz sinusoid
–48
–33
dBc
IM3 Suppression
67.7 kHz sinusoid
–57
–50
dBc
Phase Error5
—1.9
3.0
o
rms
—5
10
o
PEAK
TXVCO Pushing1,2
Open loop
100
kHz/V
TXVCO Pulling1,2
VSWR 2:1, all phases,
open loop
—200
kHzPP
RFOG Output Modulation Spectrum1,6
400 kHz offset
–65
–63
dBc
1.8 MHz offset
–70
–68
dBc
RFOD Output Modulation Spectrum2,6
400 kHz offset
–65
–63
dBc
1.8 MHz offset
–70
–65
dBc
RFOG Output Phase Noise1,5,7
10 MHz offset
–160
–155
dBc/Hz
20 MHz offset
–166
–164
dBc/Hz
RFOD Output Phase Noise2,5,7
20 MHz offset
–163
–157
dBc/Hz
RFOG Output Power Level1
ZL = 50 Ω
79
11
dBm
RFOD Output Power Level2
ZL = 50 Ω
68
10
dBm




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