R07DS0288EJ0200 Rev.2.00

Page 1 of 8

Mar 28, 2011

BB506C

Built in Biasing Circuit MOS FET IC

UHF RF Amplifier

Features

 Built in Biasing Circuit; To reduce using parts cost & PC board space.

 High gain

PG = 24 dB typ. (f = 900 MHz)

 Low noise

NF = 1.4 dB typ. (f = 900 MHz)

 Low output capacitance

Coss = 1.1 pF typ. (f = 1 MHz)

 Provide mini mold packages: CMPAK-4 (SOT-343mod)

Outline

RENESAS Package code: PTSP0004ZA-A

(Package name: CMPAK-4)

1. Source

2. Gate1

3. Gate2

4. Drain

1

4

3

2

1

4

3

2

Notes:

1.

Marking is “FS-“.

2.

BB506C is individual type number of RENESAS BBFET.

Absolute Maximum Ratings

(Ta = 25

C)

Item

Symbol

Ratings

Unit

Drain to source voltage

6

V

Gate1 to source voltage

+6

–0

V

Gate2 to source voltage

+6

–0

V

Drain current

30

mA

Channel power dissipation

Pch

Note3

250

mW

Channel temperature

Tch

150

C

Storage temperature

Tstg

–55 to +150

C

Notes: 3. Value on the glass epoxy board (50 mm

 40 mm  1 mm).

R07DS0288EJ0200

(Previous: REJ03G1246-0100)

Rev.2.00

Mar 28, 2011