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MGA-683P8-TR1G Datasheet(PDF) 1 Page - AVAGO TECHNOLOGIES LIMITED |
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MGA-683P8-TR1G Datasheet(HTML) 1 Page - AVAGO TECHNOLOGIES LIMITED |
1 / 11 page MGA-683P8 Low Noise And High Linearity Active Bias Low Noise Amplifier Data Sheet Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 90 V (Class A) ESD Human Body Model = 500 V (Class 1B) Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. Description Avago Technologies’ MGA-683P8 is an economical, easy- to-use GaAs MMIC Low Noise Amplifier (LNA). The LNA has low noise and high linearity achieved through the use of Avago Technologies’ proprietary 0.25 m GaAs Enhancement-mode pHEMT process. It is housed in a miniature 2.0 x 2.0 x 0.75 mm3 8-pin Quad-Flat-Non-Lead (QFN) package. It is designed for optimum use from 450 MHz up to 2 GHz. The compact footprint and low profile coupled with low noise, high gain and high linearity make the MGA-683P8 an ideal choice as a low noise amplifier for cellular infrastructure for GSM and CDMA. For optimum performance at higher frequency from 1.5 GHz to 4 GHz, the MGA-684P8 is recommended. Both MGA-683P8 and MGA-684P8 share the same package and pinout. Pin Configuration and Package Marking 2.0 x 2.0 x 0.75 mm3 8-lead QFN Features Low noise Figure High linearity performance GaAs E-pHEMT Technology[1] Low cost small package size: 2.0 x 2.0 x 0.75 mm3 Excellent uniformity in product specifications Tape-and-Reel packaging option available Specifications 900 MHz; 5 V, 40 mA 17.8 dB Gain 0.56 dB Noise Figure More than 20 dB Input Return Loss 32.8 dBm Output IP3 21.5 dBm Output Power at 1dB gain compression Applications Low noise amplifier for cellular infrastructure for GSM and CDMA. Other low noise application. Repeater, Metrocell/Picocell application. Simplified Schematic Pin 1 – Vbias Pin 5 – Not Used Pin 2 – RFinput Pin 6 – Not Used Pin 3 – Not Used Pin 7 – RFoutput/Vdd Pin 4 – Not Used Pin 8 – Not Used Centre tab - Ground Top View Bottom View [2] [1] [3] [4] [7] [8] [6] [5] 83X [2] [1] [3] [4] [7] [8] [6] [5] Note: The schematic is shown with the assumption that similar PCB is used for both MGA-683P8 and MGA-684P8. Detail of the components needed for this product is shown inTable 1. Enhancement mode technology employs positive gate voltage, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices. Good RF practice requires all unused pins to be earthed. Rbias C6 C3 C2 R2 L2 R1 L1 C1 C4 L3 RFin RFout Vdd [1] [2] [3] [4] [8] [7] [6] [5] C5 Note: Package marking provides orientation and identification “83” = Device Code “X” = Month Code |
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