2

Symbol

Parameter

Units

Absolute Max.

Device Current

mA

80

CW RF Input Power

dBm

18

mW

327

Operating Temperature

°C

-40 to 85

Junction Temperature

°C

150

Storage Temperature

°C

-65 to 150

Thermal Resistance

Notes:

1. Operation of this device in excess of any of

these limits may cause permanent damage.

2. Thermal resistance measured using Infrared

measurement technique.

3. Ground lead temperature is 25°C. Derate

Symbol

Parameter and Test Condition

Frequency

Units

Min.

Typ.

Max.

Device Current

mA

44.0

47.6

51.0

Gp

Power Gain

900 MHz

2000 MHz

dB

18.0

21.8

19.5

21.0

900 MHz

2000 MHz

dBm

25.0

28.9

26.5

S11

Input Return Loss, 50

 source

900 MHz

2000 MHz

dB

-16.5

-12.0

S22

Output Return Loss, 50

 load

900MHz

2000 MHz

dB

-17.3

-13.4

S12

Reverse Isolation

900 MHz

2000 MHz

dB

-24.3

-24.7

P1dB

Output Power at 1dB Gain Compression

900 MHz

2000 MHz

dBm

16.0

15.1

NF

Noise Figure

900 MHz

2000 MHz

dB

2.9

3.2

Notes:

1. Measurements obtained on CPWG line with reference plane at the ends of DUT leads (as shown in Figure 1).