2

Figure 1. Ids; LSL = 690mA, nominal = 800mA, USL = 910mA

Figure 2. OIP3; LSL = 48dBm, nominal = 52dBm

Figure 3. P1dB; LSL = 33dBm, nominal = 34.4dBm

Figure 4. PAE at P1dB; nominal = 50.3%

LSL

USL

.700

.800

.900

LSL

USL

12

12.5

13

13.5

14

14.5

15

15.5

16

LSL

48

49

50

51

52

53

54

LSL

33

33.5

34

34.5

35

45

46

47

48

49

50

51

52

53

54

55

Symbol

Parameter

Units

Absolute

Max.

Device Voltage, RF output to ground

V

5.5

Device Drain Current

mA

1500

Control Voltage

V

5.5

CW RF Input Power

dBm

28

W

8.25

Junction Temperature

°C

150

Storage Temperature

°C

-65 to 150

(Vdd=5, Ids=800mA, Tc=85°C)

Notes:

2. Operation of this device in excess of any of

these limits may cause permanent damage.

3. Thermal resistance measured using Infra-Red

measurement technique.

4. This is limited by maximum Vdd and Ids.

Derate 83.3mW/ 0C for Tc > 51.00C.

Figure 5. Gain; LSL=12.5dB, Nominal = 14.3dB, USL=15.5dB

Note:

5. Distribution data sample size is 500 samples taken from 3 different

unless otherwise specified. Future wafers allocated to this product

may have nominal values anywhere between the upper and lower

limits.

6. Measurements are made on a production test board. Input trace

losses have not been de-embedded from actual measurements.

LSL

USL

.700

.800

.900

LSL

USL

12

12.5

13

13.5

14

14.5

15

15.5

16

LSL

48

49

50

51

52

53

54

LSL

33

33.5

34

34.5

35

45

46

47

48

49

50

51

52

53

54

55

CPK = 1.592

Std Dev = 0.018

LSL

USL

.700

.800

.900

LSL

USL

12

12.5

13

13.5

14

14.5

15

15.5

16

LSL

48

49

50

51

52

53

54

LSL

33

33.5

34

34.5

35

45

46

47

48

49

50

51

52

53

54

55

CPK = 1.81

Std Dev = 0.642

CPK = 5.690

Std Dev = 0.050

CPK = 3.598

Std Dev = 0.086

Std Dev = 0.521