IRFHM830PbF

4

www.irf.com

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)

Fig 8. Maximum Safe Operating Area

Fig 9. Maximum Drain Current vs.

Case (Bottom) Temperature

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 10. Threshold Voltage vs. Temperature

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

VSD, Source-to-Drain Voltage (V)

1.0

10

100

1000

TJ = 25°C

TJ = 150°C

VGS = 0V

-75 -50 -25

0

25

50

75 100 125 150

TJ , Temperature ( °C )

0.5

1.0

1.5

2.0

2.5

3.0

ID = 50µA

ID = 250µA

ID = 1.0mA

ID = 1.0A

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

10

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0

1

10

100

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

OPERATION IN THIS AREA

LIMITED BY R DS(on)

Tc = 25°C

Tj = 150°C

Single Pulse

100µsec

1msec

10msec

DC

25

50

75

100

125

150

TC , Case Temperature (°C)

0

10

20

30

40

50

60

70

80

Limited By Package