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AUIRFZ44NSTRL Datasheet(PDF) 2 Page - International Rectifier |
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AUIRFZ44NSTRL Datasheet(HTML) 2 Page - International Rectifier |
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2 / 13 page  AUIRFZ44NS/L 2 www.irf.com S D G Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Starting TJ = 25°C, L = 0.48mH, RG = 25Ω, IAS = 25A. (See Figure 12) ISD ≤ 25A, di/dt ≤ 230A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 400μs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175°C . Notes: S D G Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– ––– 17.5 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V gfs Forward Transconductance 19 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 25 μA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Total Gate Charge ––– ––– 63 Qgs Gate-to-Source Charge ––– ––– 14 nC Qgd Gate-to-Drain ("Miller") Charge ––– ––– 23 td(on) Turn-On Delay Time ––– 12 ––– tr Rise Time –––60––– td(off) Turn-Off Delay Time ––– 44 ––– ns tf Fall Time –––45––– LD Internal Drain Inductance Between lead, nH 6mm (0.25in.) LS Internal Source Inductance from package and center of die contact Ciss Input Capacitance ––– 1470 ––– Coss Output Capacitance ––– 360 ––– Crss Reverse Transfer Capacitance ––– 88 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 63 95 ns Qrr Reverse Recovery Charge ––– 170 260 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 49 160 A ––– ––– ––– ––– ––– ––– 4.5 7.5 ID = 25A RG = 12 Ω ––– ––– TJ = 25°C, IS = 25A, VGS = 0V f TJ = 25°C, IF = 25A di/dt = 100A/μs f Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 25A f VDS = VGS, ID = 250μA VDS =55V, VGS = 0V VDS = 44V, VGS = 0V, TJ = 150°C MOSFET symbol showing the integral reverse p-n junction diode. Conditions VGS = 10V , See Fig.10Ãf VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig.5 pF VDS = 25V, ID = 25Af ID = 25A VDS = 44V VGS = 20V VGS = -20V VGS = 10V,See Fig 6 and 13 VDD = 28V |
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