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AUIRLR3110Z Datasheet(PDF) 2 Page - International Rectifier |
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AUIRLR3110Z Datasheet(HTML) 2 Page - International Rectifier |
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2 / 14 page  AUIRLR/U3110Z 2 www.irf.com S D G S D G Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L = 0.16mH,RG = 25Ω, IAS = 38A, VGS =10V. Part not recommended for use above this value. Pulse width ≤ 1.0ms; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. Notes: This value determined from sample failure population. 100% tested to this value in production. When mounted on 1" square PCB (FR-4 or G-10 Material). Rθ is measured at TJ approximately 90°C. Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 42A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.077 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 11 14 m Ω ––– 12 16 VGS(th) Gate Threshold Voltage 1.0 ––– 2.5 V gfs Forward Transconductance 52 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 20 μA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Total Gate Charge ––– 34 48 Qgs Gate-to-Source Charge ––– 10 ––– nC Qgd Gate-to-Drain ("Miller") Charge ––– 15 ––– td(on) Turn-On Delay Time ––– 24 ––– tr Rise Time ––– 110 ––– td(off) Turn-Off Delay Time ––– 33 ––– ns tf Fall Time ––– 48 ––– LD Internal Drain Inductance ––– 4.5 ––– Between lead, nH 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 3980 ––– Coss Output Capacitance ––– 310 ––– Crss Reverse Transfer Capacitance ––– 130 ––– pF Coss Output Capacitance ––– 1820 ––– Coss Output Capacitance ––– 170 ––– Coss eff. Effective Output Capacitance ––– 320 ––– Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 63 (Body Diode) A ISM Pulsed Source Current ––– ––– 250 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 34 51 ns Qrr Reverse Recovery Charge ––– 42 63 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VGS = 4.5V e VDD = 50V ID = 38A RG = 3.7 Ω TJ = 25°C, IS = 38A, VGS = 0V e TJ = 25°C, IF = 38A, VDD = 50V di/dt = 100A/μs e Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 38A e VDS = VGS, ID = 100μA VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C MOSFET symbol showing the integral reverse p-n junction diode. Conditions VGS = 4.5V e VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 80V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 80V f VGS = 4.5V, ID = 32A e VGS = 16V VGS = -16V VDS = 50V VDS = 25V, ID = 38A ID = 38A |
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