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MCT61S Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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MCT61S Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  DUAL PHOTOTRANSISTOR OPTOCOUPLERS MCT6 MCT61 MCT62 10/20/04 Page 2 of 8 © 2003 Fairchild Semiconductor Corporation ** All typicals at TA = 25°C ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter Test Conditions Symbol Min Typ** Max Unit EMITTER Input Forward Voltage (IF = 20 mA) VF 1.2 1.5 V Reverse Voltage (IR = 10 µA) VR 3.0 25 V Reverse Current (VR = 5 V) IR 0.001 10 µA Junction Capacitance (VF = 0 V, f = 1 MHz) CJ 50 pF DETECTOR Collector-Emitter Breakdown Voltage (IC = 1.0 mA, IF = 0) BVCEO 30 85 V Emitter-Collector Breakdown Voltage (IE = 100 µA, IF = 0) BVECO 613 V Collector-Emitter Dark Current (VCE = 10 V, IF = 0) ICEO 5 100 nA Capacitance (VCE = 0 V, f = 1 MHz) CCE 8pF TRANSFER CHARACTERISTICS AC Characteristic Test Conditions Symbol Min Typ** Max Units SWITCHING TIMES Non-Saturated Turn-on Time (RL = 100 Ω, IC = 2 mA, VCC = 10 V) ton 2.4 µs Non-Saturated Turn-off Time (RL = 100 Ω, IC = 2 mA, VCC = 10 V) toff 2.4 µs TRANSFER CHARACTERISTICS DC Characteristic Test Conditions Symbol Min Typ** Max Units Current Transfer Ratio, Collector-Emitter CTR MCT6 (IF = 10 mA, VCE = 10 V) 20 % MCT61 (IF = 5 mA, VCE = 5 V) 50 MCT62 100 Saturation Voltage (IF = 16 mA, IC = 2 mA) VCE(sat) 0.15 0.40 V ISOLATION CHARACTERISTICS Characteristic Test Conditions Symbol Min Typ** Max Units Input-Output Isolation Voltage (II-O ≤ 1 µA, t = 1 min.) VISO 5300 Vac(rms) Isolation Resistance (VI-O = 500 VDC) RISO 1011 Ω Isolation Capacitance (f = 1 MHz) CISO 0.5 pf |
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