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UF8A Datasheet(PDF) 1 Page - Yea Shin Technology Co., Ltd

Part # UF8A
Description  SURFACE MOUNT ULTRAFAST RECTIFI ER VOLTAGE - 50 to 1000 Volts CURR ENT - 8.0 Amperes
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Manufacturer  YEASHIN [Yea Shin Technology Co., Ltd]
Direct Link  http://www.yeashin.com
Logo YEASHIN - Yea Shin Technology Co., Ltd

UF8A Datasheet(HTML) 1 Page - Yea Shin Technology Co., Ltd

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DATA SHEET
M
8
F
U
U
R
H
T
A
8
F
U
SURFACE MOUNT ULTRAFAS T RECTIFI ER
VOLTAGE - 50 to 1000 Volts CURR ENT - 8.0 Amperes
FEATURES
• For surface mounted applications
• Low profile package
• Built-in strain relief
• Easy pick and place
• Ultrafast recovery times for high efficiency
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• Glass passivated junction
• High temperature soldering:
260
OC /10 seconds at terminals
High temperature soldering : 260
OC / 10 seconds at terminals
• Pb free product at available : 99% Sn above meet RoHS environment
substance directive request
MECHANICAL DATA
• Case: JEDEC DO-214AB molded plastic
Terminals: Solder plated, solderable per MIL-STD-750,
• Method 2026
• Polarity: Indicated by cathode band
• Standard packaging: 16mm tape (EIA-481)
Weight: 0.007 ounce, 0.21 gram
CHARACTERISTICS
SYMBOL
UF8A
UF8B
UF8D
UF8G
UF8J
UF8K
UF8M
UNIT
Maximum Recurrent Peak Reverse V oltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average For ward
Rectified Current
@TL =75
I(AV)
8.0
A
Peak Forward Surge Current
8.3ms single half sine- wave
super imposed on r ated load (JEDEC METHOD)
IFSM
100
A
Maxi mum f orward Voltage at 8.0A DC
VF
1.0
1.3
1.5
1.7
V
Maxi mum DC Reverse Cur rent
@TJ =25
at Rated DC Blocking Voltage
@TJ =100
IR
10
100
uA
Maximum Reverse Recovery Time (Note 1)
TRR
50
75
ns
Typical Junction
Capacitance (Note 2)
CJ
20
10
pF
Typical Thermal Resistance (Note 3 )
R
θJL
30
Operating Temperature Range
TJ
-55 to +150
Storage Temperature Range
TSTG
-55 to +150
NOTES : 1.Reverse Recovery Test Conditions :IF=0.5A,IR=1.0A,IRR=0.25A.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance junction to Lead.
.128(3.25)
.108(2.75)
.012(.305)
.006(.152)
.008(.203)
.002(.051)
.050(1.27)
.030(0.76)
SMC/DO-214AB
Unit:inch(mm)
.245(6.22)
.220(5.59)
.280(7.11)
.260(6.60)
.103(2.62)
.079(2.00)
.320(8.13)
.305(7.75)
SEMICONDUCTOR
http://www.yeashin.com
1
REV.02 20110725
°C
°C/W
°C
°C
°C
°C


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