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MBR3060PT Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part # MBR3060PT
Description  Schottky Rectifiers
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

MBR3060PT Datasheet(HTML) 1 Page - Fairchild Semiconductor

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MBR3035PT - MBR3060PT, Rev. C
2001 Fairchild Semiconductor Corporation
MBR3035PT - MBR3060PT
Schottky Rectifiers
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
P
D
Power Dissipation
3.0
W
RθJL
Thermal Resistance, Junction to Lead
1.4
°C/W
Symbol
Parameter
Device
Units
3035PT
3045PT
3050PT
3060PT
VF
Forward Voltage I
F = 20 A, TC = 25°C
I
F = 20 A, TC = 125°C
I
F = 30 A, TC = 25°C
I
F = 30 A, TC = 125°C
-
0.60
0.76
0.72
0.75
0.65
-
-
V
V
V
V
I
R
Reverse Current @ rated V
R
T
A = 25°C
T
A = 125°C
1.0
60
5.0
100
mA
mA
I
RRM
Peak Repetitive Reverse Surge Current
2.0 us Pulsu Width, f = 1.0 KHz
1.0
0.5
A
Features
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guard ring for over voltage protection.
Thermal Characteristics
Symbol
Parameter
Value
Units
3035PT
3045PT
3050PT
3060PT
V
RRM
Maximum Repetitive Reverse Voltage
35
45
50
60
V
I
F(AV)
Average Rectified Forward Current
30
A
I
FSM
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
200
A
T
stg
Storage Temperature Range
-65 to +175
°C
T
J
Operating Junction Temperature
-65 to +150
°C
TO-3P/TO-247AD
+
CASE
PIN 2
PIN 3
PIN 1
1
23


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