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DB2441600L Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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DB2441600L Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 5 page Product Standards Schottky Barrier Diode DB2441600L Absolute Maximum Ratings Ta = 25 C Note: *1 For embedded alumina substrate (substrate size: 5 cm× 5 cm) *2 50 Hz sine wave 1 cycle (Non-repetitive peak current) Page °C -55 to +125 Storage temperature Tstg -40 to Topr Operating ambient temperature Internal Connection Junction temperature Tj 125 °C Unit Parameter Symbol Rating Reverse voltage 1of 4 Unit: mm 2. Anode Forward current (Average) IF(AV) = 3 A rectification is possible Low forward voltage VF Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) Marking Symbol: DB2441600L Silicon epitaxial planar type For rectification Features Code 1. Cathode ― Panasonic TMiniP2-F2-B JEITA SC-110A VR 40 4P Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) V Non-repetitive peak forward surge current *2 IFSM 3.0 Forward current (Average) *1 IF(AV) °C A 50 A +85 1 2 2.4 0.85 1.75 0.15 2 1 Doc No. TT4-EA-12393 Revision. 3 Established : 2010-03-01 Revised : 2013-04-19 |
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