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2N5088 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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2N5088 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 7 page 3 NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units ON CHARACTERISTICS hFE DC Current Gain IC = 100 µA, VCE = 5.0 V 5088 5089 IC = 1.0 mA, VCE = 5.0 V 5088 5089 IC = 10 mA, VCE = 5.0 V* 5088 5089 300 400 350 450 300 400 900 1200 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.5 V VBE(on) Base-Emitter On Voltage IC = 10 mA, VCE = 5.0 V 0.8 V SMALL SIGNAL CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 5088 5089 30 25 V V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 5088 5089 35 30 V V ICBO Collector Cutoff Current VCB = 20 V, IE = 0 5088 VCB = 15 V, IE = 0 5089 50 50 nA nA IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 VEB = 4.5 V, IC = 0 50 100 nA nA Spice Model NPN (Is=5.911f Xti=3 Eg=1.11 Vaf=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271 Nc=2 Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n Tf=821.7p Itf=.35 Vtf=4 Xtf=7 Rb=10) fT Current Gain - Bandwidth Product IC = 500 µA,V CE = 5.0 mA, f = 20 MHz 50 MHz Ccb Collector-Base Capacitance VCB = 5.0 V, IE = 0, f = 100 kHz 4.0 pF Ceb Emitter-Base Capacitance VBE = 0.5 V, IC = 0, f = 100 kHz 10 pF hfe Small-Signal Current Gain IC = 1.0 mA, VCE = 5.0 V, 5088 f = 1.0 kHz 5089 350 450 1400 1800 NF Noise Figure IC = 100 µA, V CE = 5.0 V, 5088 RS = 10 k Ω, 5089 f = 10 Hz to 15.7 kHz 3.0 2.0 dB dB *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% |
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Similar Description - 2N5088 |
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