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NSBC124EDXV6T1 Datasheet(PDF) 1 Page - ON Semiconductor

Part # NSBC124EDXV6T1
Description  Dual Bias Resistor Transistors
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NSBC124EDXV6T1 Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 7
1
Publication Order Number:
NSBC114EDXV6/D
NSBC114EDXV6T1,
NSBC114EDXV6T5
Dual Bias Resistor
Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBC114EDXV6T1
series, two BRT devices are housed in the SOT−563 package which is
ideal for low power surface mount applications where board space is at
a premium.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Lead−Free Solder Plating
These are Pb−Free Devices
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted, common for Q1 and Q2)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation; TA = 25°C
Derate above 25°C
PD
357 (Note 1)
2.9 (Note 1)
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
RqJA
350 (Note 1)
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation; TA = 25°C
Derate above 25°C
PD
500 (Note 1)
4.0 (Note 1)
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
RqJA
250 (Note 1)
°C/W
Junction and Storage Temperature
Range
TJ, Tstg
−55 to +150
°C
1. FR−4 @ Minimum Pad
NSBC114EDXV6T1
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Q1
R1
R2
R2
R1
Q2
(1)
(2)
(3)
(4)
(5)
(6)
SOT−563
CASE 463A
1
xx = Device Code (Refer to Page 2)
M = Date Code
G
= Pb−Free Package
MARKING
DIAGRAM
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
NSBC1xxxDXV6T1
SOT−563 4000/Tape & Reel
NSBC1xxxDXV6T5
SOT−563 8000/Tape & Reel
xx M G
1
NSBC1xxxDXV6T1G SOT−563 4000/Tape & Reel
NSBC1xxxDXV6T5G SOT−563 8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NSVBC1xxxDXV6T1G SOT−563 4000/Tape & Reel


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