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NVD5865NLT4G Datasheet(PDF) 4 Page - ON Semiconductor |
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NVD5865NLT4G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 6 page NVD5865NL http://onsemi.com 4 TYPICAL CHARACTERISTICS 0 200 400 600 800 1000 1200 1400 1600 1800 0 102030 405060 Figure 7. Capacitance Variation VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ = 25°C VGS = 0 V Ciss Coss Crss 0 2 4 6 8 10 0 5 10 15 20 25 30 Qgs QT Qgd Figure 8. Gate−to−Source vs. Total Charge Qg, TOTAL GATE CHARGE (nC) VDS = 48 V ID = 38 A TJ = 25°C 1 10 100 1000 1 10 100 Figure 9. Resistive Switching Time Variation vs. Gate Resistance RG, GATE RESISTANCE (W) VDD = 48 V ID = 38 A VGS = 10 V td(off) td(on) tr tf 0 5 10 15 20 25 30 35 40 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 Figure 10. Diode Forward Voltage vs. Current VSD, SOURCE−TO−DRAIN VOLTAGE (V) TJ = 25°C VGS = 0 V 0.1 1 10 100 1000 0.1 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area 10 ms 100 ms 1 ms dc 10 ms RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT VGS = 10 V SINGLE PULSE TC = 25°C |
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