NVD5865NLT4G datasheet(4/6 Pages) ONSEMI

Part #	NVD5865NLT4G

Description	Power MOSFET 60 V, 46 A, 16 m, Single N?묬hannel

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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NVD5865NL

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TYPICAL CHARACTERISTICS

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0

102030

405060

Figure 7. Capacitance Variation

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 25°C

VGS = 0 V

Ciss

Coss

Crss

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Qgs

QT

Qgd

Figure 8. Gate−to−Source vs. Total Charge

Qg, TOTAL GATE CHARGE (nC)

VDS = 48 V

ID = 38 A

TJ = 25°C

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100

1000

1

10

100

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

RG, GATE RESISTANCE (W)

VDD = 48 V

ID = 38 A

VGS = 10 V

td(off)

td(on)

tr

tf

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0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00

Figure 10. Diode Forward Voltage vs. Current

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

TJ = 25°C

VGS = 0 V

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0.1

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VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

10 ms

100 ms

1 ms

dc

10 ms

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

VGS = 10 V

SINGLE PULSE

TC = 25°C

Similar Part No. - NVD5865NLT4G

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NVD5865NLT4G	115Kb / 6P	Single N?묬hannel Power MOSFET January, 2013 ??Rev. 2
VBsemi Electronics Co.,...	NVD5865NLT4G	988Kb / 7P	N-Channel 60 V (D-S) MOSFET

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