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KST4403 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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KST4403 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 4 page  ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T a=25°C unless otherwise noted Electrical Characteristics T a=25°C unless otherwise noted * Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2% Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -600 mA PC Collector Power Dissipation 350 mW TSTG Storage Temperature 150 °C Symbol Parameter Test Condition Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -0.1mA, IE=0 -40 V BVCEO * Collector-Emitter Breakdown Voltage IC= -1.0mA, IB=0 -40 V BVEBO Emitter-Base Breakdown Voltage IE= -0.1mA, IC=0 -5 V IBEV Base Cut-off Current VCE= -35V, VBE= -0.4V -0.1 µA ICEX Collector Cut-off Current VCE= -35V, VBE= -0.4V -0.1 µA hFE DC Current Gain VCE= -1V, IC= -0.1mA VCE= -1V, IC= -1.0mA VCE= -1V, IC= -10mA *VCE= -2V, IC= -150mA *VCE= -2V, IC= -500mA 30 60 100 100 20 300 VCE (sat) * Collector-Emitter Saturation Voltage IC= -150mA, IB= -15mA IC= -500mA, IB= -50mA -0.4 -0.75 V V VBE (sat) * Base-Emitter Saturation Voltage IC= -150mA, IB= -15mA IC= -500mA, IB= -50mA -0.75 -0.95 -1.3 V V fT Current Gain Bandwidth Product IC= -20mA, VCE= -10V f=100MHz 200 MHz Cob Output Capacitance VCB= -10V, IE=0 f=140KHz 8.5 pF tON Turn On Time VCC= -30V, VBE= -2V IC= -150mA, IB1= -15mA 35 ns tOFF Turn Off Time VCC= -30V, IC= -150mA IB1=IB2= -15mA 255 ns KST4403 Switching Transistor 2T Marking 1. Base 2. Emitter 3. Collector SOT-23 1 2 3 |
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Similar Description - KST4403 |
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