CYStech Electronics Corp.

Spec. No. : C386N6

Issued Date : 2013.08.19

Revised Date : 2013.09.06

Page No. : 1/9

MTP6405N6

CYStek Product Specification

P-Channel Enhancement Mode Power MOSFET

MTP6405N6

-30V

-6.5A

24mΩ(typ.)

34mΩ(typ.)

Description

The MTP6405N6 is a P-channel enhancement-mode MOSFET, providing the designer with the best

combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.

Features

Equivalent Circuit

• Simple drive requirement

MTP6405N6

G：Gate S：Source D：Drain

• Low on-resistance

• Small package outline

• Pb-free lead plating package

°C)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

-30

Gate-Source Voltage

±20

V

°C

-8.2

°C

-6.6

-6.5

Continuous Drain Current

-5.2

-30

A

°C

3.2

°C

2.1

°C

2

Total Power Dissipation

°C

1.25

W

Operating Junction Temperature and Storage Temperature Range

Tj, Tstg

-55~+150

°C