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KSH32 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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KSH32 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 6 page  ©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted * Pulse Test: PW ≤300µs, Duty Cycle≤2% Symbol Parameter Value Units VCBO Collector-Base Voltage : KSH32 : KSH32C - 40 - 100 V V VCEO Collector-Emitter Voltage : KSH32 : KSH32C - 40 - 100 V V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 3 A ICP Collector Current (Pulse) - 5 A IB Base Current - 1 A PC Collector Dissipation (TC=25°C) 15 W Collector Dissipation (Ta=25°C) 1.56 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Symbol Parameter Test Condition Min. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage : KSH32 : KSH32C IC = - 30mA, IB = 0 -40 -100 V V ICEO Collector Cut-off Current : KSH32 : KSH32C VCE = - 40V, IB = 0 VCE = - 60V, IB = 0 -50 -50 µA µA ICES Collector Cut-off Current : KSH32 : KSH32C VCE = - 40V, VBE = 0 VCE = - 100V, VBE = 0 -20 -20 µA µA IEBO Emitter Cut-off Current VBE = - 5V, IC = 0 -1 mA hFE * DC Current Gain VCE = - 4V, IC = - 1A VCE = - 4V, IC = - 3A 25 10 50 VCE(sat) * Collector-Emitter Saturation Voltage IC = - 3, IB = - 375mA -1.2 V VBE(on) * Base-Emitter On Voltage VCE = - 4A, IC = - 3A -1.8 V fT Current Gain Bandwidth Product VCE = -10V, IC = - 500mA 3 MHz KSH32/32C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP32 and TIP32C 1.Base 2.Collector 3.Emitter D-PAK I-PAK 11 |
Similar Part No. - KSH32 |
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Similar Description - KSH32 |
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