NSV60601MZ4T3G datasheet(1/6 Pages) ONSEMI

Part #	NSV60601MZ4T3G

Description	60 V, 6.0 A, Low VCE(sat) NPN Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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October, 2012 − Rev. 3

1

Publication Order Number:

NSS60601MZ4/D

NSS60601MZ4,

NSV60601MZ4T1G,

NSV60601MZ4T3G

60 V, 6.0 A, Low VCE(sat)

NPN Transistor

ON Semiconductor’s e2PowerEdge family of low VCE(sat)

transistors are surface mount devices featuring ultra low saturation

voltage (VCE(sat)) and high current gain capability. These are designed

for use in low voltage, high speed switching applications where

affordable efficient energy control is important.

Typical applications are DC−DC converters and power management

in portable and battery powered products such as cellular and cordless

phones, PDAs, computers, printers, digital cameras and MP3 players.

Other applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

cluster. The high current gain allows e2PowerEdge devices to be

driven directly from PMU’s control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

Features

• NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant*

MAXIMUM RATINGS (TA = 25°C)

Rating

Symbol

Max

Unit

Collector-Emitter Voltage

VCEO

60

Vdc

Collector-Base Voltage

VCBO

100

Vdc

Emitter-Base Voltage

VEBO

6.0

Vdc

Collector Current − Continuous

IC

6.0

A

Collector Current − Peak

ICM

12.0

A

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

60 VOLTS, 6.0 AMPS

2.0 WATTS

NPN LOW VCE(sat) TRANSISTOR

EQUIVALENT RDS(on) 50 mW

SOT−223

CASE 318E

STYLE 1

MARKING DIAGRAM

Schematic

C 2, 4

B 1

E 3

PIN ASSIGNMENT

1

60601G

AYW

A

= Assembly Location

Y

= Year

W

= Work Week

60601 = Specific Device Code

G

= Pb−Free Package

Top View Pinout

C

CE

B

4

12

3

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

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