NSV60600MZ4T1G datasheet(4/6 Pages) ONSEMI

Part #	NSV60600MZ4T1G

Description	60 V, 6.0 A, Low VCE(sat) PNP Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G

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TYPICAL CHARACTERISTICS

Figure 2. DC Current Gain

Figure 3. DC Current Gain

IC, COLLECTOR CURRENT (A)

10

1

0.1

0.01

0.001

10

100

1000

10

1

0.1

0.01

0.001

Figure 4. Collector−Emitter Saturation Voltage

Figure 5. Collector−Emitter Saturation Voltage

IC, COLLECTOR CURRENT (A)

10

1

0.1

0.01

0.001

0.01

0.1

1

10

1

0.1

0.01

0.001

0.01

0.1

1

Figure 6. Collector Saturation Region

Figure 7. VBE(on) Voltage

IB, BASE CURRENT (A)

IC, COLLECTOR CURRENT (A)

1.0E−03

1.0E−04

0.01

0.1

10

1

0.1

0.01

0.001

0

0.1

0.2

0.3

0.4

0.5

0.6

1.2

VCE = 2 V

150C

−40C

25C

VCE = 4 V

IC/IB = 10

150C

−40C

25C

IC/IB = 50

150C

−40C

25C

1.0E−02

1.0E−01

1.0E+01

0.7

0.8

0.9

1.0

1.1

VCE = 2 V

150C

−40C

25C

IC = 6 A

0.1 A

1 A

0.5 A

10

100

1000

150C

−40C

25C

1

1.0E+00

TJ = 25C

2 A

3 A

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NSV60600MZ4T1G Datasheet(PDF) 4 Page - ON Semiconductor

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