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FK8V03050L Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part # FK8V03050L
Description  Silicon N-channel MOSFET For lithium-ion secondary battery protecion circuit For DC-DC Converter
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

FK8V03050L Datasheet(HTML) 1 Page - Panasonic Semiconductor

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Features
Low drain-source On-state Resistance
RDS(on) typ = 16 m
 (VGS = 4.5 V)
High-speed switching : Qg = 5.1 nC
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol:
Packaging
Embossed type (Thermo-compression sealing) :
000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25
C
Channel Temperature
Storage Temperature Range
Note) *1 Device mounted on a glass-epoxy board (See Figure 1)
*2 Pulse test: Ensure that the channel temperature does not exceed 150
C
Page
2. Source
6. Drain
MOS FET
Product Standards
FK8V03050L
4. Gate
8. Drain
3. Source
7. Drain
Tch
150
C
+85
C
Tstg
-55 to +150
C
Total Power Dissipation (Steady State)
*1
PD
1
W
Total Power Dissipation (t = 10 s)
*1
1.5
For lithium-ion secondary battery protecion circuit
For DC-DC Converter
1
Source
7. Drain
8. Drain
6.
Parameter
of 6
Unit: mm
1. Source
5. Drain
2. Source
3.
Drain
Code
FK8V03050L
Silicon N-channel MOSFET
Panasonic
WMini8-F1
JEITA
SC-115
4. Gate
Drain-source Voltage
VDS
33
V
3
Symbol
Rating
Unit
Gate-source Voltage
VGS
20
V
32
8
Source Current (Pulsed)
(Body Diode)
*1,*2
ISp
(BD)
8
Internal Connection
Pin Name
1. Source
5. Drain
Drain Current (Steady State)
*1
ID
3E
Operating Ambient Temperature
Topr
-40 to
A
Drain Current (t = 10 s)
*1
10
Drain Current (Pulsed)
*1,*2
IDp
Figure1 FR4 Glass-Epoxy Board
25.4 mm
 25.4 mm  0.8 mm
2.9
(0.81)
0.3
0.16
0.65
1
234
5
6
7
8
4
(G)
3
(S)
(D)
5
1
(S)
2
(S)
(D)
8
(D)
7
(D)
6
Doc No. TT4-EA-13029
Revision. 3
Established : 2011-01-13
Revised
: 2013-08-08


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