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FK8V03050L Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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FK8V03050L Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 7 page Features Low drain-source On-state Resistance RDS(on) typ = 16 m (VGS = 4.5 V) High-speed switching : Qg = 5.1 nC Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) Marking Symbol: Packaging Embossed type (Thermo-compression sealing) : 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25 C Channel Temperature Storage Temperature Range Note) *1 Device mounted on a glass-epoxy board (See Figure 1) *2 Pulse test: Ensure that the channel temperature does not exceed 150 C Page 2. Source 6. Drain MOS FET Product Standards FK8V03050L 4. Gate 8. Drain 3. Source 7. Drain Tch 150 C +85 C Tstg -55 to +150 C Total Power Dissipation (Steady State) *1 PD 1 W Total Power Dissipation (t = 10 s) *1 1.5 For lithium-ion secondary battery protecion circuit For DC-DC Converter 1 Source 7. Drain 8. Drain 6. Parameter of 6 Unit: mm 1. Source 5. Drain 2. Source 3. Drain Code ― FK8V03050L Silicon N-channel MOSFET Panasonic WMini8-F1 JEITA SC-115 4. Gate Drain-source Voltage VDS 33 V 3 Symbol Rating Unit Gate-source Voltage VGS 20 V 32 8 Source Current (Pulsed) (Body Diode) *1,*2 ISp (BD) 8 Internal Connection Pin Name 1. Source 5. Drain Drain Current (Steady State) *1 ID 3E Operating Ambient Temperature Topr -40 to A Drain Current (t = 10 s) *1 10 Drain Current (Pulsed) *1,*2 IDp Figure1 FR4 Glass-Epoxy Board 25.4 mm 25.4 mm 0.8 mm 2.9 (0.81) 0.3 0.16 0.65 1 234 5 6 7 8 4 (G) 3 (S) (D) 5 1 (S) 2 (S) (D) 8 (D) 7 (D) 6 Doc No. TT4-EA-13029 Revision. 3 Established : 2011-01-13 Revised : 2013-08-08 |
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