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RJQ6008DPM-00T0 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJQ6008DPM-00T0 Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 9 page  R07DS0847EJ0100 Rev.1.00 Page 1 of 8 Jul 17, 2012 Preliminary Datasheet RJQ6008DPM 600V - 10A - IGBT and Diode High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching Outline 1. NC 2. Cathode 3. Anode, Collector 4. Emitter 5. Gate Diode IGBT 1 2 3 4 5 2 5 3 4 RENESAS Package code: PRSS0005ZB-A (Package name: TO-3PFM-5) Absolute Maximum Ratings IGBT (Tc = 25°C) Item Symbol Ratings Unit Collector to emitter voltage VCES 600 V Gate to emitter voltage VGES ±30 V Tc = 25 °C IC Note1 20 A Collector current Tc = 100 °C IC Note1 10 A Collector peak current IC(peak) Note3 100 A Collector dissipation PC Note2 48 W Junction to case thermal impedance j-c 2.3 °C/W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. Limited by Tj max. 2. Value at Tc = 25°C 3. Pulse width limited by maximum safe operating area. R07DS0847EJ0100 Rev.1.00 Jul 17, 2012 |
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