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PJSD05LCTM-AU_A0_10001 Datasheet(PDF) 1 Page - Pan Jit International Inc. |
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PJSD05LCTM-AU_A0_10001 Datasheet(HTML) 1 Page - Pan Jit International Inc. |
1 / 5 page PAGE . 1 February 2,2013-REV.03 PJSD05LCTM-AU BI-DIRECTIONAL ESD PROTECTION DIODE This Penta has been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 5Vdc and below.This offers an integrated solution to protect up to data line where the board space is a premium. MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS (TA=25oC) SPECIFICATION FEATURES • 25W Power Dippsipation (8/20s Waveform) • Low Leakage Current, Maximum of 1A@5Vdc • Very low Clamping voltage • IEC 61000-4-2 ESD 15kV air, 8kV Contact Compliance • Lead free in comply with EU RoHS 2011/65/EU directives • Green molding compound as per IEC61249 Std. . (Halogen Free) • Acqire quality system certificate : TS16949 • AEC-Q101 qualified APPLICATIONS • Video I/O ports protection • Set Top Boxes • Portable Instrumentation MECHANICAL DATA • Case : SOD-923, Plastic • Terminals : Solderable per MIL-STD-750, Method 2026 • Approx. Weight : 0.0004gram • Marking : X Rating Symbol Value Units Peak Pulse Power (8/20 s Waveform) PPP 25 W Peak Pulse Current (8/20 s Waveform) I PP 2 A ESD Voltage (HBM) V ESD >25 kV Operati ng Juncti on and S torage Temperature Range TJ,TSTG -55 to +150 O C Parameter Symbol Conditions Min. Typ. Max. Units Reverse Stand-Off Voltage VWRM -- 5.0 V Reverse Breakdown Voltage VBR IBR=1mA 5.78 - 7.82 V Reverse Leakage Current I R VR=5V - - 1.0 A Clamping Voltage (8/20s) VC I PP=2A - - 12.5 V Off State Junction Capacitance CJ 0 Vdc Bias f=1MHz - - 15 pF |
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