Rev. 1.0 / Nov. 2012

10

Absolute Maximum Ratings

Absolute Maximum DC Ratings

DRAM Component Operating Temperature Range

Absolute Maximum DC Ratings

Symbol

Parameter

Rating

Units

Notes

VDD

Voltage on VDD pin relative to Vss

- 0.4 V ~ 1.80 V

V

1,3

VDDQ

Voltage on VDDQ pin relative to Vss

- 0.4 V ~ 1.975 V

V

1,3

- 0.4 V ~ 1.975 V

V

1

Storage Temperature

-55 to +100

o

C1, 2

Notes:

1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at these or any other conditions above

those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rat-

ing conditions for extended periods may affect reliability.

2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement

conditions, please refer to JESD51-2 standard.

0.6XVDDQ,When VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV.

Temperature Range

Symbol

Parameter

Rating

Units

Notes

Normal Operating Temperature Range

0 to 85

o

C

1,2

Industrial Temperature Range

-40 to 95

o

C1,3

Notes:

1. Operating Temperature TOPER is the case surface temperature on the center / top side of the DRAM. For measure-

ment conditions, please refer to the JEDEC document JESD51-2.

2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. Dur-

case temperature. Full specifications are guaranteed in this range, but the following additional conditions apply:

a. Refresh commands must be doubled in frequency, therefore reducing the Refresh interval tREFI to 3.9 µs.

b. If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use

the Manual Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b).