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KSC5402DT Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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KSC5402DT Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 10 page ©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 NPN Silicon Transistor Planar Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted * Pulse Test: Pulse Width=5ms, Duty Cycle < 10% Thermal Characteristics T C=25°C unless otherwise noted * Mounted on 1” square PCB (FR4 ro G-10 Material) Symbol Parameter Value Units VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 12 V IC Collector Current (DC) 2 A ICP *Collector Current (Pulse) 5 A IB Base Current (DC) 1 A IBP *Base Current (Pulse) 2 A PC Power Dissipation(TC=25°C) : D-PAK * : TO-220 30 50 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Symbol Characteristics Rating Unit TO-220 D-PAK Rθjc Thermal Resistance Junction to Case 2.5 4.17 * °C/W Rθja Junction to Ambient 62.5 50 TL Maximum Lead Temperature for Soldering Purpose ; 1/8” from Case for 5 Seconds 270 270 °C KSC5402D/KSC5402DT High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling Diode • Suitable for Electronic Ballast Application • Small Variance in Storage Time • Two Package Choices; D-PAK or TO-220 C B E Equivalent Circuit 1 1.Base 2.Collector 3.Emitter 1 D-PAK TO-220 |
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