KSC5402DT datasheet(1/10 Pages) FAIRCHILD

Part #	KSC5402DT

Description	High Voltage High Speed Power Switch Application

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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Rev. B2, December 2002

NPN Silicon Transistor Planar Silicon Transistor

Absolute Maximum Ratings T

C=25°C unless otherwise noted

* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%

Thermal Characteristics T

C=25°C unless otherwise noted

* Mounted on 1” square PCB (FR4 ro G-10 Material)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

1000

V

VCEO

Collector-Emitter Voltage

450

V

VEBO

Emitter-Base Voltage

12

V

IC

Collector Current (DC)

2

A

ICP

*Collector Current (Pulse)

5

A

IB

Base Current (DC)

1

A

IBP

*Base Current (Pulse)

2

A

PC

Power Dissipation(TC=25°C) : D-PAK *

: TO-220

30

50

W

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

- 65 ~ 150

°C

Symbol

Characteristics

Rating

Unit

TO-220

D-PAK

Rθjc

Thermal Resistance

Junction to Case

2.5

4.17 *

°C/W

Rθja

Junction to Ambient

62.5

50

TL

Maximum Lead Temperature for Soldering Purpose

; 1/8” from Case for 5 Seconds

270

°C

KSC5402D/KSC5402DT

High Voltage High Speed Power Switch

Application

• Wide Safe Operating Area

• Built-in Free Wheeling Diode

• Suitable for Electronic Ballast Application

• Small Variance in Storage Time

• Two Package Choices; D-PAK or TO-220

C

B

E

Equivalent Circuit

1

1.Base

2.Collector

3.Emitter

1

D-PAK

TO-220

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