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KSC5338F Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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KSC5338F Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 5 page  ©2000 Fairchild Semiconductor International Rev. A, February 2000 NPN Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted * Pulse Test: Pulse Width=5ms, Duty Cycle ≤10% Symbol Parameter Value Units VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 A IB Base Current (DC) 2 A IBP Base Current (Pulse) 4 A PC Collector Dissipation (TC=25°C) 40 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 1000 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB =0 450 V BVEBO Emitter-Base Breakdown Voltage IC=1mA, IE=0 9 V ICBO Collector Cut-off Current VCB = 800V, VBE = 0 10 µA IEBO Emitter Cut-off Current VEB = 9V, IC = 0 10 µA hFE1 hFE2 * DC Current Gain VCE = 5V, IC = 0.5A VCE = 1V, IC = 2A 15 6 30 VCE(sat) Collector-Emitter Saturation Voltage IC = 1A, IB = 0.1A IC = 2A, IB = 0.4A 0.55 0.8 0.5 V V VBE(sat) Base-Emitter Saturation Voltage IC = 1A, IB = 0.1A IC = 2A, IB = 0.4A 1.1 1.25 V V Cob Output Capacitance VCB = 10V, f =1MHz 70 pF Cib Input Capacitance VEB=8V, IC=0, f =1MHz 1000 pF fT Current Gain Bandwidth Product VCE = 10V, IC = 0.1A 14 MHz tON Turn ON Time VCC = 125V, IC = 1A IB1 = 0.2A, IB2 = -0.2A RL=125Ω 200 ns tSTG Storage Time 2 µs tF Fall Time 500 ns KSC5338F High Voltage Power Switch Switching Application • High Speed Switching • Wide SOA 1 1.Base 2.Collector 3.Emitter TO-220F |
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