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DB2J20900L Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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DB2J20900L Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 4 page Ver. CED Publication date: July 2012 1 DB2J209 Silicon epitaxial planar type For high frequency rectification DB3X209K in SMini2 type package Features Short reverse recovery time trr Low forward voltage VF Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: BE Packaging DB2J20900L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Reverse voltage VR 20 V Repetitive peak reverse voltage VRRM 20 V Forward current (Average) IF(AV) 500 mA Non-repetitive peak forward surge current * IFSM 3 A Junction temperature Tj 125 ° C Storage temperature Tstg –55 to +125 ° C Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current) Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF1 IF = 10 mA 0.3 V VF2 IF = 500 mA 0.5 V Reverse current IR VR = 10 V 30 µ A Terminal capacitance Ct VR = 10 V, f = 1 MHz 7 pF Reverse recovery time * trr IF = IR = 100 mA, Irr = 0.1 × IR , RL = 100 Ω 2.4 ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 400 MHz *: trr measurement circuit Bias Application Unit (N-50BU) 90% Pulse Generator (PG-10N) Rs = 50 Ω Wave Form Analyzer (SAS-8130) Ri = 50 Ω tp = 2 µs tr = 0.35 ns δ = 0.05 IF = 100 mA IR = 100 mA RL = 100 Ω 10% tr tp trr VR IF t t A Input Pulse Output Pulse Irr = 0.1 × IR Unit: mm 1: Cathode 2: Anode Panasonic SMini2-F5-B JEITA SC-90A Code |
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