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TO-220AB Datasheet(PDF) 1 Page - Vishay Siliconix |
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TO-220AB Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Document Number: 91374 www.vishay.com S11-0520-Rev. D, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET SiHP18N50C Vishay Siliconix FEATURES • Low Figure-of-Merit Ron x Qg • 100 % Avalanche Tested • High Peak Current Capability • dV/dt Ruggedness • Improved trr/Qrr • Improved Gate Charge • High Power Dissipations Capability • Compliant to RoHS Directive 2002/95/EC Notes a. Drain current limited by maximum junction temperature. b. Repetitive rating; pulse width limited by maximum junction temperature. c. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 , IAS = 17 A. d. ISD 18 A, dI/dt 380 A/μs, VDD VDS, TJ 150 °C. e. 1.6 mm from case. PRODUCT SUMMARY VDS (V) at TJ max. 560 RDS(on) ()VGS = 10 V 0.225 Qg (Max.) (nC) 76 Qgs (nC) 21 Qgd (nC) 29 Configuration Single N-Channel MOSFET G D S TO-220AB G D S ORDERING INFORMATION Package TO-220AB Lead (Pb)-free SiHP18N50C-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 30 Continuous Drain Current (TJ = 150 °C)a VGS at 10 V TC = 25 °C ID 18 A TC = 100 °C 11 Pulsed Drain Currentb IDM 72 Linear Derating Factor TO-220AB 1.8 W/°C Single Pulse Avalanche Energyc EAS 361 mJ Maximum Power Dissipation TO-220AB PD 223 W Peak Diode Recovery dV/dtd dV/dt 5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature)d for 10 s 300 * Pb containing terminations are not RoHS compliant, exemptions may apply |
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