June 2013

©2013 Fairchild Semiconductor Corporation

FDMC8026S Rev.C4

www.fairchildsemi.com

1

FDMC8026S

30 V, 21 A, 4.4 m

Ω

Features

high efficiency

SyncFET Schottky Body Diode

MSL1 robust package design

100% UIL tested

RoHS Compliant

General Description

The FDMC8026S has been designed to minimize losses in

power conversion application. Advancements in both silicon and

package technologies have been combined to offer the lowest

device has the added benefit of an efficient monolithic schottky

body diode.

Applications

Synchronous Rectifier for DC/DC Converters

Notebook Vcore/GPU low side switch

Networking Point of Load low side switch

Telecom secondary side rectification

MLP 3.3x3.3

Bottom

D

D

D

D

S

S

S

G

Top

Pin 1

G

S

S

S

D

D

D

D

5

6

7

8

3

2

1

4

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

30

V

Gate to Source Voltage

(Note 4)

±20

V

Drain Current -Continuous (Package limited)

21

A

-Continuous (Silicon limited)

76

-Continuous

(Note 1a)

19

-Pulsed

100

Single Pulse Avalance Energy

(Note 3)

66

mJ

Power Dissipation

36

W

Power Dissipation

(Note 1a)

2.4

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Resistance, Junction to Case

3.4

°C/W

Thermal Resistance, Junction to Ambient

(Note 1a)

53

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDMC8026S

FDMC8026S

MLP 3.3X3.3

13 ’’

12 mm

3000 units