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KSC2859YMTF Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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KSC2859YMTF Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a=25°C unless otherwise noted Electrical Characteristics T a=25°C unless otherwise noted hFE1 Classification Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units ICEO Collector Cut-off Current VCB=35V, IE=0 0.1 µA IEBO Emitter Cut-off Current VEB=5V, IC=0 0.1 µA hFE1 hFE2 DC Current Gain VCE=1V, IC=100mA VCE=6V, IC=400mA 70 25 240 VCE (sat) Collector-Emitter Saturation Voltage IC=100mA, IB=10mA 0.1 0.25 V VBE (on) Base-Emitter On Voltage VCE=1V, IC=100mA 0.8 1.0 V fT Current Gain-Bandwidth Product VCE=6V, IC=20mA 300 MHz Cob Output Capacitance VCB=6V, IE=0, f=1MHz 7 pF Classification O Y hFE1 70 ~ 140 120 ~ 240 1. Base 2. Emitter 3. Collector KSC2859 Low Frequency Power Amplifier • Complement to KSA1182 E1 O Marking hFE grade 1 2 3 SOT-23 |
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