RJK6036DP3-A0

Preliminary

R07DS0841EJ0100 Rev.1.00

Page 2 of 3

Jul 05, 2011

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown voltage

600

—

—

V

Zero gate voltage drain current

—

—

1

A

Gate to source leak current

—

—

±0.1

A

Gate to source cutoff voltage

3.0

—

4.5

V

Static drain to source on state

resistance

—

5.7

6.8



Note3

Input capacitance

Ciss

—

165

—

pF

Output capacitance

Coss

—

20

—

pF

Reverse transfer capacitance

Crss

—

2.5

—

pF

f = 1 MHz

Turn-on delay time

—

12

—

ns

Rise time

—

12

—

ns

Turn-off delay time

—

20

—

ns

Fall time

—

31

—

ns

Rg = 10



Body-drain diode forward voltage

—

0.9

1.5

V

Note3

Notes: 3. Pulse test

4. This device is sensitive to electrostatic discharge.

It is recommended to adopt appropriate cautions when handling this product.