©2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002

NPN Epitaxial Silicon Transistor

Symbol

Parameter

Value

Units

Collector-Base Voltage

50

V

Collector-Emitter Voltage

30

V

Emitter-Base Voltage

5

V

Collector Current

50

mA

Collector Power Dissipation

250

mW

TJ

Junction Temperature

150

°C

Storage Temperature

-55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Base Breakdown Voltage

50

V

Collector-Emitter Breakdown Voltage

30

V

Emitter-Base Breakdown Voltage

5

V

Collector Cut-off Current

0.1

µA

Emitter Cut-off Current

0.1

µA

DC Current Gain

40

240

Base-Emitter On Voltage

0.67

0.75

V

Collector-Emitter Saturation Voltage

0.08

0.3

V

Current Gain Bandwidth Product

150

300

MHz

Output Capacitance

2.0

2.5

pF

Classification

R

O

Y

40 ~ 80

70 ~ 140

120 ~ 240

KSC1675

FM/AM RF AMP, MIX, CONV,OSC,IF

• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

1. Emitter 2. Base 3. Collector

TO-92

1