RJK6025DPH-E0T2 datasheet(3/7 Pages) RENESAS

Part #	RJK6025DPH-E0T2

Description	600V - 1A - MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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3 / 7 page

RJK6025DPH-E0

Preliminary

R07DS1012EJ0100Rev.1.00

Page 3 of 6

Feb 12, 2013

Main Characteristics

1

0.1

0.01

0.001

50

40

30

20

10

0

1.2

1.0

0.8

0.6

0.4

0.2

0

4

8

12

16

20

Drain to Source Voltage

VDS (V)

Typical Output Characteristics

Gate to Source Voltage

VGS (V)

Typical Transfer Characteristics

0.01

1

0.1

10

100

1

Drain Current

ID (A)

Static Drain to Source on State Resistance

vs. Drain Current (Typical)

Drain to Source Voltage

VDS (V)

Maximum Safe Operation Area

Case Temperature

Tc (

°C)

Static Drain to Source on State Resistance

vs. Temperature (Typical)

0246

10

8

Ta = 25

°C

Pulse Test

5.4 V

VGS = 4.8 V

5.2 V

5.6 V

5.8 V

5 V

6 V

8, 10 V

VGS = 10 V

Ta = 25

°C

Pulse Test

Tc = 75

°C

25

°C

-25

0

50

25

75

100 125 150

ID = 0.8 A

0.2 A

0.4 A

0.1

1

10

1000

100

10

Reverse Drain Current

IDR (A)

Body-Drain Diode Reverse

Recovery Time (Typical)

di / dt = 100 A /

μs

VGS = 0, Ta = 25°C

0.01

0.1

1

10

1

10

100

1000

Tc = 25

°C

1 shot

Operation in this

area is limited by

RDS(on)

10

μs

VGS = 10 V

Pulse Test

VDS = 10 V

Pulse Test

−25°C

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RJK6025DPH-E0T2 Datasheet(PDF) 3 Page - Renesas Technology Corp

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