Electronic Components Datasheet Search |
|
RJK6025DPH-E0T2 Datasheet(PDF) 1 Page - Renesas Technology Corp |
|
RJK6025DPH-E0T2 Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page R07DS1012EJ0100Rev.1.00 Page 1 of 6 Feb 12, 2013 Preliminary Datasheet RJK6025DPH-E0 600V - 1A - MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 13 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline 1 1. Gate 2. Drain 3. Source 4. Drain 3 2 4 D G S RENESAS Package code: PRSS0004ZJ-B (Package name: TO-251) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 600 V Gate to source voltage VGSS 30 V Drain current ID 1 A Drain peak current ID (pulse) Note1 2 A Body-drain diode reverse drain current IDR 1 A Body-drain diode reverse drain peak current IDR (pulse) Note1 2 A Channel dissipation Pch Note2 29.7 W Channel to case thermal impedance ch-c 4.2 C/W Channel temperature Tch 150 C Storage temperature Tstg –55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25 C R07DS1012EJ0100 Rev.1.00 Feb 12, 2013 |
Similar Part No. - RJK6025DPH-E0T2 |
|
Similar Description - RJK6025DPH-E0T2 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |