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RJK6002DPE-00J3 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJK6002DPE-00J3
Description  600V - 2A - MOS FET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK6002DPE-00J3 Datasheet(HTML) 3 Page - Renesas Technology Corp

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RJK6002DPE
Preliminary
R07DS0214EJ0100 Rev.1.00
Page 3 of 6
Jun 21, 2012
Main Characteristics
5
4
3
2
1
0
4
8
12
16
20
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Gate to Source Voltage VGS (V)
Typical Transfer Characteristics
0.1
10
1
10
100
1
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Case Temperature Tc (
°C)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
02
46
8
10
0.1
1
0.001
0.01
0.0001
0
4
8
12
16
-25
0
50
25
75
100 125 150
0.001
0.01
0.1
1
10
100
0.1
1
10
100
1000
Tc = 25
°C
1 shot
Operation in this
area is limited by
R
DS(on)
0.1
1
10
1000
100
10
Reverse Drain Current IDR (A)
Body-Drain Diode Reverse
Recovery Time (Typical)
di / dt = 100 A /
μs
VGS = 0, Ta = 25°C
5.2 V
V
GS = 5 V
5.6 V
8 V, 10 V
6 V
10
μs
PW
=
100
μs
VGS = 10 V
Pulse Test
1 A
ID = 2 A
VDS = 10 V
Pulse Test
Tc = 75
°C
25
°C
−25°C
Ta = 25
°C
Pulse Test
VGS = 10 V
Ta = 25
°C
Pulse Test
0.5 A
5.8 V
5.4 V


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